| 型號 | 功能描述 | 生產廠商 | 廠商LOGO | PDF大小 | PDF頁數(shù) | PDF文件 | 相關型號 | 第一頁預覽 | 產品購買 |
| IPD65R950CFD | Metal Oxide Semiconductor Field Effect Transistor | INFINEON[Infineon Technologies AG] | ![INFINEON[Infineon Technologies AG]的LOGO-天天IC網(wǎng)](https://cache.ttic.cc/PdfSupLogo/211INFINEON.GIF) | 1163.79 Kbytes | 共15頁 |  | |
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| IPD65R950CFD | N-Channel MOSFET Transistor | ISC[Inchange Semiconductor Company Limited] | ![ISC[Inchange Semiconductor Company Limited]的LOGO-天天IC網(wǎng)](https://cache.ttic.cc/PdfSupLogo/572ISC.GIF) | 335.89 Kbytes | 共2頁 | | |
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| IPD65R950CFDATMA1 | MOSFET LOW POWER_LEGACY | Infineon Technologies | | 545.10 Kbytes | 共15頁 | | |
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| IPD65R950CFDATMA1 | MOSFET N-CH 650V 3.9A TO252-3 | Infineon Technologies | | 545.10 Kbytes | 共15頁 | | |
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| IPD65R950CFDATMA2 | MOSFET 650V CoolMOS CFD2 is Infineon's second generation of market leading high voltage CoolMOS MOSFETs with integrated fast body diode. The CFD2 devices are the successor of 600V CFD with improved energy efficiency. The softer commutation behavior and ther | Infineon Technologies | | 545.10 Kbytes | 共15頁 | | |
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產品購買
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| IPD65R950CFDATMA2 | MOSFET N-CH 650V 3.9A TO252-3 | Infineon Technologies | | 545.10 Kbytes | 共15頁 | | |
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產品購買
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| IPD65R950CFDBTMA1 | MOSFET N-CH 650V 3.9A TO-252 | Infineon Technologies | | 545.10 Kbytes | 共15頁 | | |
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產品購買
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| IPD65R950CFDBTMA1 | MOSFET N-CH 650V 3.9A TO252-3 | Infineon Technologies | | 545.10 Kbytes | 共15頁 | | |
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產品購買
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