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IPD65R660CFD PDF文件_規(guī)格信息

IPD65R660CFD
規(guī)格信息：

制造商:Infineon

產(chǎn)品種類:MOSFET

RoHS:是

技術(shù):Si

安裝風(fēng)格:SMD/SMT

封裝 / 箱體:TO-252-3

通道數(shù)量:1 Channel

晶體管極性:N-Channel

Vds-漏源極擊穿電壓:650 V

Id-連續(xù)漏極電流:6 A

Rds On-漏源導(dǎo)通電阻:660 mOhms

Vgs th-柵源極閾值電壓:4 V

Vgs - 柵極-源極電壓:30 V

Qg-柵極電荷:22 nC

Pd-功率耗散:63 W

配置:Single

商標(biāo)名:CoolMOS

封裝:Cut Tape

封裝:MouseReel

封裝:Reel

高度:2.3 mm

長度:6.5 mm

系列:CoolMOS CFD2

晶體管類型:1 N-Channel

寬度:6.22 mm

商標(biāo):Infineon Technologies

下降時間:10 ns

產(chǎn)品類型:MOSFET

上升時間:8 ns

工廠包裝數(shù)量:2500

子類別:MOSFETs

零件號別名:IPD65R660CFDBTMA1 IPD65R66CFDXT SP000745024

單位重量:4 g

IPD65R660CFD

型號	功能描述	生產(chǎn)廠商	PDF大小	PDF頁數(shù)	產(chǎn)品購買
IPD65R660CFD	650V CoolMOS CFD Power Transistor	INFINEON[Infineon Technologies AG]	3951.5 Kbytes	共20頁	產(chǎn)品購買
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IPD65R660CFDAATMA1	MOSFET N-CH TO252-3	Infineon Technologies	1.76 Mbytes	共13頁	產(chǎn)品購買
IPD65R660CFDAATMA1	MOSFET N-CH 650V 6A TO252-3	Infineon Technologies	1.76 Mbytes	共13頁	產(chǎn)品購買
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IPD65R660CFDATMA2	MOSFET 650V CoolMOS CFD2 is Infineon's second generation of market leading high voltage CoolMOS MOSFETs with integrated fast body diode. The CFD2 devices are the successor of 600V CFD with improved energy efficiency. The softer commutation behavior and ther	Infineon Technologies	3.30 Mbytes	共21頁	產(chǎn)品購買
IPD65R660CFDATMA2	MOSFET N-CH 700V 6A TO252-3-313	Infineon Technologies	3.30 Mbytes	共21頁	產(chǎn)品購買
IPD65R660CFDBTMA1	MOSFET N-CH 650V 6A TO252	Infineon Technologies	4.36 Mbytes	共21頁	產(chǎn)品購買
IPD65R660CFDBTMA1	MOSFET N-CH 650V 6A TO252-3	Infineon Technologies	4.36 Mbytes	共21頁	產(chǎn)品購買
IPD65R660CFDBTMA1	MOSFET N-CH 650V 6A TO252-3	Infineon Technologies	4.36 Mbytes	共21頁	產(chǎn)品購買