封裝/外殼:PG-TO252-3
Packing Type:TAPE & REEL
Moisture Level:3
RDS (on) max:800.0m?
IDpuls max:15.7A
VDS max:600.0V
ID max:5.6A
Package:DPAK (TO-252)
Rth:2.6K/W
QG:17.2nC
Budgetary Price ?€/1k:0.2
Ptot max:48.0W
Polarity:N
Pin Count:3.0Pins
Operating Temperature min max:-40.0°C 150.0°C
RthJA max:62.0K/W
Mounting:SMT
VGS(th) min max:2.5V 3.5V
無鉛情況/RoHs:無鉛/符合RoHs
IPD60R800CE
| 型號 | 功能描述 | 生產(chǎn)廠商 | 廠商LOGO | PDF大小 | PDF頁數(shù) | PDF文件 | 相關(guān)型號 | 第一頁預(yù)覽 | 產(chǎn)品購買 |
|---|---|---|---|---|---|---|---|---|---|
| IPD60R800CE | Very high commutation ruggedness | INFINEON[Infineon Technologies AG] | 1680.38 Kbytes | 共17頁 | 產(chǎn)品購買 | ||||
| IPD60R800CE | 600V CoolMOS?a CE Power Transistor | INFINEON[Infineon Technologies AG] | 1196.4 Kbytes | 共16頁 | 產(chǎn)品購買 | ||||
| IPD60R800CE | N-Channel MOSFET Transistor | ISC[Inchange Semiconductor Company Limited] | 335.86 Kbytes | 共2頁 | 產(chǎn)品購買 | ||||
| IPD60R800CEATMA1 | MOSFET N-CH 600V 5.6A TO252-3 | Infineon Technologies | 1.16 Mbytes | 共16頁 | 產(chǎn)品購買 | ||||
| IPD60R800CEATMA1 | MOSFET N-CH 600V 5.6A TO252-3 | Infineon Technologies | 1.16 Mbytes | 共16頁 | 產(chǎn)品購買 | ||||
| IPD60R800CEAUMA1 | MOSFET CONSUMER | Infineon Technologies | 1.16 Mbytes | 共15頁 | 產(chǎn)品購買 | ||||
| IPD60R800CEAUMA1 | CONSUMER | Infineon Technologies | 1.16 Mbytes | 共16頁 | 產(chǎn)品購買 |
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