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SeriesHEXFET?

PackageBulk

FET TypeN-Channel

TechnologyMOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)30 V

Current - Continuous Drain (Id) @ 25°C10A (Ta), 28A (Tc)

Drive Voltage (Max Rds On, Min Rds On)-

Rds On (Max) @ Id, Vgs16mOhm @ 17A, 10V

Vgs(th) (Max) @ Id2.35V @ 25μA

Gate Charge (Qg) (Max) @ Vgs10 nC @ 10 V

Vgs (Max)±20V

Input Capacitance (Ciss) (Max) @ Vds560 pF @ 25 V

FET Feature-

Power Dissipation (Max)2.6W (Ta), 20W (Tc)

Operating Temperature-55°C ~ 150°C (TJ)

Mounting TypeSurface Mount

Supplier Device Package8-PQFN-Dual (3.3x3.3), Power33

Package / Case8-PowerVDFN