C3M0015065K 全新原裝正品 100%原裝進(jìn)口正品！歡迎來(lái)電咨詢(xún)?。?nbsp;
C3M0015065KSilicon Carbide Power MOSFETC3MTM MOSFET TechnologyN-Channel Enhancement Mode
Features? C3MTM SiC MOSFET technology? Optimized package with separate driver source pin? 8mm of creepage distance between drain and source? High blocking voltage with low _disibledevent= 175 ?C 416 W Fig. 20TJ , Tstg Operating Junction and Storage Temperature -40 to+175 ?CTL Solder Temperature, 1.6mm (0.063”) from case for 10s 260 ?CMd Mounting Torque, (M3 or 6-32 screw) 18.8Nmlbf-inNote (1): Recommended turn off / turn on gate voltage VGS - 4V...0V / +15V