| 型號(hào) | 功能描述 | 生產(chǎn)廠商 | 廠商LOGO | PDF大小 | PDF頁(yè)數(shù) | PDF文件 | 相關(guān)型號(hào) | 第一頁(yè)預(yù)覽 | 產(chǎn)品購(gòu)買(mǎi) |
| ZXMS6004DG | 60V N-channel self protected enhancement mode | DIODES[Diodes Incorporated] | ![DIODES[Diodes Incorporated]的LOGO-天天IC網(wǎng)](https://cache.ttic.cc/PdfSupLogo/41DIODES.GIF) | 485.85 Kbytes | 共10頁(yè) |  | |
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| ZXMS6004DGQ | 60V N-CHANNEL SELF PROTECTED ENHANCEMENT MODE | DIODES[Diodes Incorporated] | | 435.32 Kbytes | 共8頁(yè) | | |
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| ZXMS6004DGQ-13 | LOW SIDE INTELLIFET SOT223 | Diodes Incorporated | | 680.71 Kbytes | 共8頁(yè) | | |
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| ZXMS6004DGQTA | 60V N-CHANNEL SELF PROTECTED ENHANCEMENT MODE | DIODES[Diodes Incorporated] | | 435.32 Kbytes | 共8頁(yè) | | |
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| ZXMS6004DGTA | MOSFET INTELLIFET MOSFET 60V N CHAN | Diodes Incorporated | | 667.57 Kbytes | 共8頁(yè) | | |
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| ZXMS6004DGTA | IC PWR DRIVER N-CHAN 1:1 SOT223 | Diodes Incorporated | | 711.14 Kbytes | 共8頁(yè) | | |
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| ZXMS6004DGTA | 連續(xù)漏極電流（Id）（25°C 時(shí)）：1.3A 漏源電壓（Vdss）：60V 柵源極閾值電壓：- 漏源導(dǎo)通電阻：600mΩ @ 500mA,3V 最大功率耗散（Ta=25°C）：1.3W 類(lèi)型：N溝道 | DIODES(美臺(tái)) | | 479.85 Kbytes | 共10頁(yè) | | |
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| ZXMS6004DGTA | Power Switch Lo Side 0.7A 4Pin SOT223 | Diodes Inc | | 711.14 Kbytes | 共8頁(yè) | | |
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