Current - Continuous Drain (Id) @ 25° C:22A
Drain to Source Voltage (Vdss):500V
FET Feature:Standard
FET Type:MOSFET N-Channel, Metal Oxide
Gate Charge (Qg) @ Vgs:43nC @ 10V
Input Capacitance (Ciss) @ Vds:1900pF @ 25V
Mounting Type:Surface Mount
Package / Case:TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
Power - Max:265W
Rds On (Max) @ Id, Vgs:240 mOhm @ 11A, 10V
Supplier Device Package:D3 [S]
Vgs(th) (Max) @ Id:5V @ 1mA
包裝:3D3PAK
通道模式:Enhancement
最大漏源電壓:500 V
最大連續(xù)漏極電流:22 A
RDS -于:240@10V mOhm
最大門源電壓:±30 V
典型導(dǎo)通延遲時(shí)間:8 ns
典型上升時(shí)間:6 ns
典型關(guān)閉延遲時(shí)間:18 ns
典型下降時(shí)間:2 ns
工作溫度:-55 to 150 °C
安裝:Surface Mount
標(biāo)準(zhǔn)包裝:Rail / Tube