| 型號(hào) | 功能描述 | 生產(chǎn)廠商 | 廠商LOGO | PDF大小 | PDF頁(yè)數(shù) | PDF文件 | 相關(guān)型號(hào) | 第一頁(yè)預(yù)覽 | 產(chǎn)品購(gòu)買 |
| 80N06 | Fast Switching Speed | ISC[Inchange Semiconductor Company Limited] | ![ISC[Inchange Semiconductor Company Limited]的LOGO-天天IC網(wǎng)](https://cache.ttic.cc/PdfSupLogo/572ISC.GIF) | 67.88 Kbytes | 共2頁(yè) |  | |
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| 80N06 | N-Channel 60 V (D-S) MOSFET | VBSEMI[VBsemi Electronics Co.,Ltd] | ![VBSEMI[VBsemi Electronics Co.,Ltd]的LOGO-天天IC網(wǎng)](https://cache.ttic.cc/PdfSupLogo/1345VBSEMI.GIF) | 1289.25 Kbytes | 共7頁(yè) |  | |
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| 80N06-10 | N-Channel 60 V (D-S) MOSFET | VBSEMI[VBsemi Electronics Co.,Ltd] | ![VBSEMI[VBsemi Electronics Co.,Ltd]的LOGO-天天IC網(wǎng)](https://cache.ttic.cc/PdfSupLogo/1345VBSEMI.GIF) | 1289.2 Kbytes | 共7頁(yè) |  | |
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| 80N06-251 | 連續(xù)漏極電流(Id)(25°C 時(shí)):80A(Tc) 漏源電壓(Vdss):60V 柵源極閾值電壓:2.4V @ 250uA 漏源導(dǎo)通電阻:13mΩ @ 30A,10V 最大功率耗散(Ta=25°C):71W(Tc) 類型:N溝道 | GOFORD(谷峰) |  | 2.12 Mbytes | 共6頁(yè) |  | |
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| 80N06LG | N-Channel 60 V (D-S) MOSFET | VBSEMI[VBsemi Electronics Co.,Ltd] | ![VBSEMI[VBsemi Electronics Co.,Ltd]的LOGO-天天IC網(wǎng)](https://cache.ttic.cc/PdfSupLogo/1345VBSEMI.GIF) | 1289.26 Kbytes | 共7頁(yè) |  | |
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